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| Ordering number : ENA1094 2SC5538A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5538A Features * * * * VHF to UHF Band OSC, High-Frequency Amplifier Applications High gain : S21e2=10.5dB typ (f=1GHz). High cut-off frequency : fT=5.2GHz typ. Ultrasmall, slim flat-lead package (1.4mm0.8mm0.6mm). Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 10 2 100 100 150 --55 to +150 Unit V V V mA mW C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob Cre VCB=10V, IE=0A VEB=1V, IC=0A VCE=3V, IC=7mA VCE=3V, IC=30mA VCE=3V, IC=7mA VCB=3V, f=1MHz VCB=3V, f=1MHz 110 100 3 5.2 1.0 0.7 1.5 GHz pF pF Conditions Ratings min typ max 1.0 10 200 Unit A A Marking : NA Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network O2809AB TK IM TC-00002120 No. A1094-1/5 2SC5538A Continued from preceding page. Parameter Forward Transfer Gain Noise Figure Symbol S21e NF 2 Conditions VCE=3V, IC=7mA, f=1GHz VCE=3V, IC=7mA, f=1GHz Ratings min 8 typ 10.5 1.4 2.5 max Unit dB dB Package Dimensions unit : mm (typ) 7027-002 Top View 1.4 Marking 3 NA 1 2 1 : Base 2 : Emitter 3 : Collector Top view 0.3 0.25 3 1.4 0.8 1 0.3 2 0.2 0.45 0.1 1 2 0.07 0.6 3 Bottom View 0.07 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP 35 IC -- VCE 200A 180A 160A 32 28 IC -- VBE VCE=3V 30 Collector Current, IC -- mA Collector Current, IC -- mA 24 20 16 12 8 4 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT01313 25 140A 120A 20 100A 15 80A 10 60A 40A 5 0 0 1 2 3 4 5 6 7 8 20A IB=0A 9 10 Collector-to-Emitter Voltage, VCE -- V 7 5 IT01312 2 Base-to-Emitter Voltage, VBE -- V hFE -- IC fT -- IC VCE=3V f=1GHz VCE=3V Gain-Bandwidth Product, fT -- GHz 10 7 5 DC Current Gain, hFE 3 2 3 2 100 7 5 1.0 7 3 3 5 7 1.0 2 3 5 7 10 2 3 5 5 Collector Current, IC -- mA 7 100 2 IT01314 7 1.0 2 3 5 7 10 2 3 5 7 Collector Current, IC -- mA IT01315 No. A1094-2/5 2SC5538A 3 2 Cob -- VCB f=1MHz 3 Cre -- VCB f=1MHz Reverse Transfer Capacitance, Cre -- pF 2 Output Capacitance, Cob -- pF 1.0 7 5 1.0 7 5 3 2 3 2 0.1 7 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.1 7 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 10 IT01316 14 NF -- IC Forward Transfer Gain,S21e2 -- dB VCE=3V f=1GHz Collector-to-Base Voltage, VCB -- V S21e2 -- I IT01317 C 12 VCE=3V f=1GHz 8 Noise Figure, NF -- dB 10 6 8 4 6 4 2 2 0 0 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 120 7 100 IT01318 7 1.0 2 3 5 7 10 2 3 5 PC -- Ta Collector Current, IC -- mA 7 100 IT01319 Collector Dissipation, PC -- mW 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT01320 No. A1094-3/5 2SC5538A S Parameters (Common emitter) VCE=1V, IC=3mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.874 0.785 0.651 0.613 0.581 0.568 0.556 0.563 0.558 0.560 0.567 S11 --40.6 --71.6 --114.8 --136.9 --153.9 --164.2 --172.0 --178.1 175.4 168.9 163.1 S21 8.627 6.874 4.701 3.365 2.716 2.218 1.863 1.626 1.473 1.345 1.230 S21 152.3 132.5 107.3 92.8 81.9 73.4 66.2 59.6 53.9 48.1 42.5 S12 0.062 0.101 0.135 0.152 0.155 0.161 0.170 0.177 0.185 0.196 0.205 S12 67.9 52.1 37.1 31.1 29.9 30.0 30.5 32.7 35.4 37.4 38.0 S22 0.918 0.748 0.537 0.430 0.361 0.326 0.300 0.297 0.306 0.313 0.335 S22 --23.4 --41.7 --57.6 --65.6 --74.3 --80.2 --86.1 --92.3 --96.5 --100.6 --102.9 VCE=3V, IC=7mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.789 0.670 0.552 0.522 0.504 0.488 0.478 0.481 0.478 0.492 0.489 S11 --48.3 --83.7 --123.8 --145.3 --158.5 --169.1 --176.1 178.4 172.7 167.4 162.0 S21 16.232 12.431 7.607 5.401 4.155 3.425 2.849 2.511 2.237 2.016 1.844 S21 147.7 126.4 104.7 92.7 84.1 77.1 71.0 65.6 60.7 55.5 50.5 S12 0.039 0.061 0.081 0.094 0.106 0.121 0.136 0.152 0.167 0.185 0.200 S12 66.1 53.0 45.2 45.9 48.2 49.1 51.0 52.2 52.8 53.2 52.7 S22 0.862 0.673 0.438 0.333 0.290 0.270 0.253 0.239 0.240 0.245 0.248 S22 --27.2 --44.6 --59.1 --65.1 --68.7 --71.0 --74.7 --79.6 --82.8 --86.7 --90.0 VCE=5V, IC=20mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.643 0.530 0.459 0.447 0.440 0.434 0.437 0.437 0.438 0.439 0.444 S11 --66.4 --104.6 --140.3 --157.2 --168.4 --175.9 177.1 173.0 168.4 164.2 159.1 S21 26.381 17.543 9.835 6.805 5.210 4.194 3.518 3.077 2.730 2.459 2.249 S21 137.4 116.5 98.9 89.4 82.4 76.6 71.5 66.7 62.5 58.0 53.5 S12 0.029 0.041 0.058 0.074 0.092 0.110 0.129 0.148 0.166 0.186 0.203 S12 62.8 54.2 55.4 59.2 61.4 61.9 62.3 61.8 61.6 60.7 59.5 S22 0.748 0.531 0.322 0.246 0.213 0.199 0.191 0.184 0.181 0.186 0.192 S22 --36.3 --52.5 --62.7 --65.5 --68.6 --70.2 --72.9 --76.5 --80.9 --84.8 --87.3 No. A1094-4/5 2SC5538A SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2009. Specifications and information herein are subject to change without notice. PS No. A1094-5/5 |
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